01929cam a2200289 a 450000100090000000300090000900500170001800800410003501000170007602000290009304000130012204200080013505000270014308200190017008400230018910000230021224500730023525000120030826000360032030000330035650400510038950506360044052004450107665000200152165000700154170000280161116717164KE-MeUCS20180515152638.0110401s2012    njua     b    001 0 eng    a  2011014262  a9780470537947 (hardback)  aDLCcDLC  apcc00aTK7871.85b.S9883 201200a621.3815/2222  aTEC0080902bisacsh1 aSze, S. M.,d1936-10aSemiconductor devices, physics and technology /cS.M. Sze, M.K. Lee.  a3rd ed.  aHoboken,  N.J. :bWiley,c2012.  aix, 578 p. :bill. ;c27 cm.  aIncludes bibliographical references and index.8 aMachine generated contents note: CHAPTER 0 IntroductionCHAPTER l Energy Bands and Carrier Concentration in Thermal EquilibriumCHAPTER 2 Carrier Transport PhenomenaCHAPTER 3 p-n junctionCHAPTER 4 Bipolar Transistor and Related DevicesCHAPTER 5 MOS Diode and MOSFETCHAPTER 6 Advanced MOSFET and Related DevicesCHAPTER 7 MESFET and Related DevicesCHAPTER 8 Microwave Diodes, Quantum-Effect, and Hot-Electron DevicesCHAPTER 9 LEDs and LasersCHAPTER 10 Photo detectors and Solar CellsCHAPTER 11 Crystal Growth and EpitaxyCHAPTER 12 Film FormationCHAPTER 13 Lithography and EtchingCHAPTER 14 Impurity DopingCHAPTER 15 Integrated Devices.  a"Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices"-- 0aSemiconductors. 7aTECHNOLOGY & ENGINEERING / Electronics / Semiconductors2bisacsh.1 aLee, M. K.q(Ming-Kwei)